electron hole
英 [ɪˈlektrɒn həʊl]
美 [ɪˈlektrɑːn hoʊl]
网络 空穴又称电洞; 空穴; 电洞; 电子洞; 电子空穴
双语例句
- The improvement of tandem device performance is attributed to the efficient electron and hole injection from charge generation layer to two adjacent emission units.
叠层发光器件性能的提高与中间电荷产生层向上下两个发光单元有效的电子、空穴注入有关。 - Under application of an electric field, the electron and hole move in opposite directions at different velocities.
在电场的作用下，电子和空穴以不同的速度沿着相反的方向运动。 - A hypothesis of electron hole pair is raised in this paper with a complete new point of view.
本文以全新的观点提出了电子空位对假说。 - Poisson's equation and continuity equations for electron and hole are formulated into a subcircuit format suitable for general circuit simulator in the equivalent circuit approach.
所谓的等效电路法就是将半导体元件的柏松方程式、电子连续方程式以及电洞连续方程式转换成等效电路。 - The electron and hole system are described by a Fermi-Dirac distribution with two parameters: the quasi-Fermi level μ and the carrier temperature Tc which is initially higher than the lattice temperature Tc> TL.
这时电子和空穴各自分布在能带底，形成准费米狄拉克分布。这种热平衡费米分布可以用两个参数来描述，准费米能级μ和载流子温度Tc，开始时载流子温度高于晶格温度Tc>Tl。 - Single electron/ hole charge/ discharge processes are observed in the device with the narrowest channel.
进一步，在最窄沟道器件中观察到单电荷的荷电过程。 - But it is very difficult to integrate n-MOSFET and p-MOSFET into the same layer structure, because electron and hole transport in different material and structure of grown layer needed is different.
但要在同一层结构的材料上实现n-MOSFET和p-MOSFET的集成则比较困难，因为空穴和电子输运在不同的材料层，所需生长的层结构不同。 - The polarization is described as interaction between electron ( hole) and its image charge.
这种影响归结为电子和空穴的镜像电荷对电子与空穴的相互作用。 - The orders of dependency of the free electron conductivity and the electron hole conductivity on the oxygen partial pressure was-1/ 4 and 1/ 4 at 800 ℃, respectively, which agreed with the Hebb-Wagner equation.
在800℃下，电解质的自由电子电导率以及电子空穴电导率的氧分压级数分别为-1/4和1/4，符合Hebb-Wagner公式。 - A new approach on covalent bond theory& brief introduction of the hypothesis of electron hole pair
共价键理论新探&电子空位对假说简介 - The electron hole conductivity had no change while free electron conductivity decreased with the increase of the Al_2O_3 content.
随着Al2O3含量的增加，电子空穴电导率变化不明显，自由电子电导率减小。 - Design and Analysis of Single Electron hole Trap Memory
电子空穴对单电子陷阱存储器的设计与分析 - The energy spectrum of the electron and hole is calculated using the transfer matrix formalism in the adiabatic approximation.
在绝热近似条件下，采用传递矩阵方法计算了电子和空穴的能谱。 - In inorganic materials, their carriers are electron and hole that both possess their spin and charge.
在无机材料中，他们的载流子有电子和空穴，都带有自旋和电荷。 - In this paper, the high temperature models and calculation results of silicon materials 'intrinsic carrier concentration m, energy gap Eg, effective mass of electron and hole as well as carrier mobility p are introduced.
介绍了硅材料本征载流子浓度ni、禁带宽度Eg、电子和空穴有效质量和及载流子迁移率μ的高温模型和计算结果。 - After considered the effect of phonon, exciton binding energy still increases with pressure, but the enhancement is weakened, exciton phonon interaction screens the Coulomb interaction between electron and hole.
考虑声子作用后，激子结合能仍随压力的增大而增加，但增加的幅度明显减弱，激子&声子作用屏蔽了电子与空穴的库仑作用。 - Considering potential configuration of a silicon nanocrystal based memory and the mixing effect of valence bands, we calculate direct tunneling time of electron and hole with sequential tunnel theory and in the Bardeen's transfer Hamiltonian formalism.
在分析硅基纳米存储器的势结构和价带混合效应对直接隧穿过程影响的基础上，采用顺序隧穿理论和巴丁传输哈密顿方法，发展了电子和空穴直接隧穿时间的计算模型。 - Basing on the Fermi statistical distribution of electron and hole in semiconductor silicon, the dependence of the transmittance of silicon under CO2 laser irradiation on temperature has been calculated, furthermore theoretical results were proved by experimental data.
本文基于半导体材料硅（Si）中电子、空穴的费米统计分布，计算了Si对CO2激光的透射率随温度的变化，并用实验理论作了验证。 - In our investigation, the electron ( hole) and optical phonon modes interaction in quantum wells have been studied.
在研究中，同时计入了电子（空穴）与量子阱中各类光学声子的作用。 - Titanium dioxide is a semi-conductor with wide band gap, and its photocatalysis operates only when it is irradiated under the ultraviolet radiation of sunlight, and also, the electron hole of TiO_2 has very high reunited rate.
但由于TiO2为宽禁带半导体，对太阳光的利用仅局限于紫外部分，并且TiO2的光生电子空穴复合几率很高。 - The physical model of p ( proton),γ,β irradiation damages ( including the concentrations of electron hole pair and displaced atom) on CMOS electronic device has been established.
建立了CMOS电子元器件中质子、电子和光子辐照损伤（电子空穴对和离位原子浓度）计算模型。 - It was discovered that ( 1) the extra electron and hole injected by the applied electric field make the lattice relaxation, and bipolaron excitons are formed.
发现外电场注入的额外电子和空穴使电致发光高分子晶格弛豫，形成双极化子激子； - One of the most important techniques in improve the conversion efficiency is to reduce the surface reflectance to absorb more light energy to generate more electron hole pairs.
提高光电转化效率的关键环节之一是降低硅片表面反射率，吸收更多的光以产生电子空穴对。 - It is found that both parallel magnetic vector potential and electrostatic potential can decisively shift Dirac point in a different way, which may be an efficient way to achieve electron or hole filter.
研究结果发现平行的磁矢势和静电势两者可以以截然不同的方式移动狄拉克点的位置，这有可能成为一种实现电子或空穴滤波器的有效方式。 - In order to research the properties of exciton better, we also compute the energy when the interaction between electron and hole is regardless.
为了更好的研究量子点内激子的性质，我们把不考虑电子空穴相互作用时的基态能量，一并做了计算。 - EPR analysis shows the reasons may be in UV light the material of titanium dioxide may produces electron hole, but the active state of the electron hole is easy to decline, in a short time it can be attenuated to the level before irradiation.
EPR分析可知原因可能是材料中的二氧化钛在紫外线照射下产生电子空穴，但是这种处于活性状态的电子空穴对能量容易衰减，在短时间内其反应活性即可衰减到照射前水平。 - Carrier degradation mainly due to electron and hole capture and interface states generated.
热载流子退化主要归于电子俘获、空穴俘获和界面态产生。 - Diamond has many advantages compared with other semiconductor materials, such as low dielectric constant, high band gap, good electron hole mobility, high thermal conductivity and optical properties.
金刚石作为宽禁带半导体材料与其它材料相比，具有非常低的介电常数，很高的禁带宽度和极高的热导率及优良的光学性质。 - However, organic solar cells based on carbon nanotubes is the carbon nanotubes powder and organic materials blends, the combination between carbon nanotubes is weak, resulting in greater resistance and high electron hole on the composite, making the efficiency of the solar cell is low.
然而，基于碳纳米管的有机太阳能电池是将粉末状的碳纳米管与有机材料共混，碳纳米管之间的结合较弱，因此导致较大的电阻且电子空穴对容易发生复合，使得太阳能电池的效率很低。 - The use of electron transport materials and hole transport materials to be characterized by transmission electron and hole transport materials to match the increased EL efficiency, to reach the equilibrium electron and hole injection into most of the new area of research.
利用电子传输材料和空穴传输材料的特点得到传输电子和传输空穴相匹配的材料来提高电致发光效率，使其达到电子和空穴的注入平衡成为研究荧光化合物的新领域。